Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송윤흡 | - |
dc.date.accessioned | 2016-08-29T01:54:04Z | - |
dc.date.available | 2016-08-29T01:54:04Z | - |
dc.date.issued | 2015-03 | - |
dc.identifier.citation | IEICE ELECTRONICS EXPRESS, v. 12, NO 7, Page. 1-6 | en_US |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | https://www.jstage.jst.go.jp/article/elex/12/7/12_12.20150098/_article | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/22803 | - |
dc.description.abstract | We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better I-on/I-off ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and Ion/Ioff ratio. After the simulation, a junction device with N+ Si0.8Ge0.2/P Si/N+ Si0.8Ge0.2 and an area of 4 x 4 um(2) is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM. | en_US |
dc.description.sponsorship | Ministry of Science, ICT & Future Planning (MSIP), Korea, under the Information Technology Research Center (ITRC) support program S.C. Oh of Samsung Electronics | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | en_US |
dc.subject | switching device | en_US |
dc.subject | UHV-CVD | en_US |
dc.subject | SiGe | en_US |
dc.subject | N plus PN plus | en_US |
dc.subject | STT-MRAM | en_US |
dc.title | Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structure | en_US |
dc.type | Article | en_US |
dc.relation.no | 7 | - |
dc.relation.volume | 12 | - |
dc.identifier.doi | 10.1587/elex.12.20150098 | - |
dc.relation.page | 1-6 | - |
dc.relation.journal | IEICE ELECTRONICS EXPRESS | - |
dc.contributor.googleauthor | Roh, Il Pyo | - |
dc.contributor.googleauthor | Song, Yun Heub | - |
dc.contributor.googleauthor | Song, Jin Dong | - |
dc.relation.code | 2015011401 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | yhsong2008 | - |
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