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dc.contributor.author김태환-
dc.date.accessioned2016-08-24T02:16:38Z-
dc.date.available2016-08-24T02:16:38Z-
dc.date.issued2015-03-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, v. 162, NO 6, Page. 419-421en_US
dc.identifier.issn0013-4651-
dc.identifier.issn1945-7111-
dc.identifier.urihttp://jes.ecsdl.org/content/162/6/H419.short-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/22729-
dc.description.abstractTransparent conducting thin films composed of silver nanowires (Ag NWs) and graphene-oxide (GO) flakes were formed on glass substrates by using drop-casting and dipping processes. The conductivity of the thin films with Ag NWs was enhanced due to the embedded GO flakes. The sheet resistance and the transmittance of the GO-treated Ag NWs were improved to about 50 Omega/sq and 93% in comparison with those of the Ag NWs. X-ray photoelectron spectroscopy spectra showed that the increase in the conductivity of the Ag NWs due to GO treatment was attributable to shifts in the Ag 3d peaks toward lower binding energies. The chemical state of the Ag atoms in the Ag NWs changed from a metallic-silver state to a silver-oxide state due to the GO treatment, and the nitrogen atoms at the edges of the GO flakes permeated inside the GO flakes. The conductivity of the transparent thin films consisting of Ag NWs and GO flakes increased due to the formation of the quaternary nitrogen in the GO flakes. (C) 2015 The Electrochemical Society. All rights reserved.en_US
dc.description.sponsorshipBasic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technologyen_US
dc.language.isoenen_US
dc.publisherELECTROCHEMICAL SOC INCen_US
dc.subjectLIGHT-EMITTING-DIODESen_US
dc.subjectCHEMICAL-REDUCTIONen_US
dc.subjectELECTRODESen_US
dc.subjectCATALYSTSen_US
dc.subjectPAPERen_US
dc.subjectHEATen_US
dc.subjectAg NWsen_US
dc.subjectconducting transparent electrodeen_US
dc.subjectgraphene oxideen_US
dc.titleConducting Transparent Thin Films Based on Silver Nanowires and Graphene-Oxide Flakesen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume162-
dc.identifier.doi10.1149/2.1121506jes-
dc.relation.page419-421-
dc.relation.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETY-
dc.contributor.googleauthorChoo, Dong Chul-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2015002636-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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