Macro model for stochastic behavior of resistance distribution of magnetic tunnel junction

Title
Macro model for stochastic behavior of resistance distribution of magnetic tunnel junction
Author
송윤흡
Keywords
TEMPERATURE-DEPENDENCE; RAM
Issue Date
2015-03
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 54, Page. 1-7
Abstract
In this work, we fabricated MgO-based magnetic tunnel junction (MTJ) samples to observe behavior of resistance variation, and investigated a stochastic behavior model for MTJ resistance from measured real data. We found the relationship between parallel resistance (R-P), anti-parallel resistance (R-AP), and TMR from the measurements. The variation of barrier thickness affects not only resistance but also TMR. This means that broad R-AP distribution is caused by R-P distribution. In addition, R-AP distribution can be reduced by increasing temperature and bias voltage. We developed a macro model that can evaluate resistance distribution based on the stochastic behavior of MTJ resistance variation from only t(ox) varied. The amount of resistance variation, which is considered with regard to the circuit performance, can be obtained from Delta(tox) designed by designer. In addition, the impact for operating circumstance such as bias and temperature can be considered by using fit equations. (C) 2015 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/JJAP.54.04DD12/metahttp://hdl.handle.net/20.500.11754/22702
ISSN
0021-4922; 1347-4065
DOI
10.7567/JJAP.54.04DD12
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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