Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning

Title
Characterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaning
Other Titles
Ultra Clean Processing of Semiconductor Surfaces XII
Authors
박진구
Keywords
contact angle; Cu-BTA complex; cupric & cuprous oxide; electrochemical impedance spectroscopy
Issue Date
2015-01
Publisher
Scitec Publications Ltd.
Citation
Diffusion and Defect Data Pt.B: Solid State Phenomena, v. 219, Page. 205-208
Abstract
Although copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been adapted to the semiconductor fabrication, Cu became the choice of materials for interconnection. However, copper CMP process introduces new defects on the surface such as slurry particle, organic residue, scratch and corrosion.
URI
http://hdl.handle.net/20.500.11754/21444https://www.scientific.net/SSP.219.205
ISBN
978-3038352426
DOI
http://dx.doi.org/10.4028/www.scientific.net/SSP.219.205
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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