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dc.contributor.author박진구-
dc.date.accessioned2016-05-30T05:14:02Z-
dc.date.available2016-05-30T05:14:02Z-
dc.date.issued2015-01-
dc.identifier.citationDiffusion and Defect Data Pt.B: Solid State Phenomena, v. 219, Page. 205-208en_US
dc.identifier.isbn978-3038352426-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/21444-
dc.identifier.urihttps://www.scientific.net/SSP.219.205-
dc.description.abstractAlthough copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been adapted to the semiconductor fabrication, Cu became the choice of materials for interconnection. However, copper CMP process introduces new defects on the surface such as slurry particle, organic residue, scratch and corrosion.en_US
dc.language.isoenen_US
dc.publisherScitec Publications Ltd.en_US
dc.subjectcontact angleen_US
dc.subjectCu-BTA complexen_US
dc.subjectcupric & cuprous oxideen_US
dc.subjectelectrochemical impedance spectroscopyen_US
dc.titleCharacterization of Cu-BTA Organic Complexes on Cu during Cu CMP and Post Cu Cleaningen_US
dc.title.alternativeUltra Clean Processing of Semiconductor Surfaces XIIen_US
dc.typeArticleen_US
dc.relation.volume219-
dc.identifier.doi10.4028/www.scientific.net/SSP.219.205-
dc.relation.page205-208-
dc.relation.journalDiffusion and Defect Data Pt.B: Solid State Phenomena-
dc.contributor.googleauthorCho, Byoung-Jun-
dc.contributor.googleauthorPark, Jin-Goo-
dc.contributor.googleauthorShima, Shohei-
dc.contributor.googleauthorHamada, Satomi-
dc.relation.code2014007325-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.pidjgpark-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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