Improved device performance of solution-processed zinc-tin-oxide thin film transistor effects using graphene/Al electrode

Title
Improved device performance of solution-processed zinc-tin-oxide thin film transistor effects using graphene/Al electrode
Authors
박진섭
Keywords
Organic solar cells; F(4)TCNQ doping; Reduced graphene oxide
Issue Date
2015-01
Publisher
IOP PUBLISHING LTD
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 48, NO 3, Page. 35101-35105
Abstract
We report on improved device performances of solution-processed zinc tin oxide (ZTO) thin film transistors (TFTs) using a graphene interlayer between an Al electrode and ZTO. The ZTO TFTs with a high-temperature annealing process at 600 degrees C show improved output characteristics compared to ones with annealing at relatively lower temperatures, which can be attributed to the reduced impurity and condensed surface state. The ZTO TFTs using the Ohmic contact of the graphene/Al electrode (G-ZTO TFTs) with an optimized annealing process exhibited a good saturation mobility of (6.96 cm(2)V.s)(-1), a subthreshold slope of 1.52 V dec(-1) and a threshold voltage shift toward a negative bias direction. The improvement of device performances of G-ZTO TFTs can be contributed to good Ohmic contact formation by using graphene inserted between the ZTO active layer and the Al electrode.
URI
http://hdl.handle.net/20.500.11754/21382http://www.sciencedirect.com/science/article/pii/S1566119916300039
ISSN
1566-1199
DOI
http://dx.doi.org/10.1016/j.orgel.2016.01.003
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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