Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents
- Title
- Area-selective atomic layer deposition of high-quality Ru thin films by chemo-selective adsorption of short alkylating agents
- Author
- 김우희
- Keywords
- Ruthenium; Area-selective atomic layer deposition; Aminosilane inhibitor; Surface modification; Growth retardation
- Issue Date
- 2022-11-29
- Publisher
- ELSEVIER
- Citation
- MATERIALS LETTERS
- Abstract
- We report the effects of surface modification by vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) molecules as short alkylating agents on technologically important substrates of Si, SiO2, TiN, and W. In this study, tricarbonyl(trimethylenemethane) ruthenium [Ru(TMM)(CO)3] was employed as a metal-organic pre-cursor for atomic layer deposition (ALD) of Ru, which produced high-quality Ru films with significantly low resistivity and high growth -per-cycle. Through surface modification of vapor-dosed DEATMS molecules, signif-icant growth retardation against the ALD Ru process was selectively found on SiO2 and TiN in contrast to Si(-H) and W substrates. With applying chemo-selectively inhibitory characteristics, we successfully demonstrate area selective deposition of ALD Ru films on a patterned TiN/Si substrate.
- URI
- https://information.hanyang.ac.kr/#/eds/detail?an=000898672400007&dbId=edswschttps://repository.hanyang.ac.kr/handle/20.500.11754/189761
- ISSN
- 0167-577X; 1873-4979
- DOI
- 10.1016/j.matlet.2022.133574
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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