Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits
- Title
- Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits
- Author
- 오새룬터
- Keywords
- Amorphous oxide semiconductor; channel width dependence; Gate drivers; Logic gates; random potential distribution model; Scalability; Semiconductor device modeling; Thin film transistors; thin-film transistor; Transistors; Transmission line measurements; wide-width effect
- Issue Date
- 2023-10
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- IEEE Electron Device Letters, v. 44, NO. 10, Page. 1.0-4.0
- Abstract
- Oxide semiconductor thin-film transistors (TFTs) with various device dimensions are integrated on the same substrate for different purposes and functionality. However, unlike length scalability, the width-dependence of oxide TFTs is seldom reported. Current increase proportional to the channel width and lower threshold voltage (Vth) are found in devices with wide channel width. In this study, we investigate InGaZnO TFTs with various widths to examine the width-dependent characteristics via device characterization and simulation. We introduce a random potential distribution (RPD) model to reproduce the observed device characteristics at different dimensions. The RPD model shows that devices with larger channel width and shorter gate length have a high probability to form conductive paths at a lower Fermi level, resulting in a decreased Vth agreeing with experimental characteristics. IEEE
- URI
- https://ieeexplore.ieee.org/document/10224529https://repository.hanyang.ac.kr/handle/20.500.11754/187675
- ISSN
- 0741-3106;1558-0563
- DOI
- 10.1109/LED.2023.3306287
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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