Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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dc.contributor.author심종인-
dc.date.accessioned2023-08-04T01:05:08Z-
dc.date.available2023-08-04T01:05:08Z-
dc.date.issued2016-01-
dc.identifier.citation2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v. 2, article no. 7376088, Page. 1-2-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7376088en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/185223-
dc.description.abstractEfficiencies of 280nm AlGaN Deep UV-LEDs are extracted based on carrier rate equation. The results point out that hole density in p-type cladding layer is one of the important factor for efficiency droop phenomena. © 2015 IEEE.-
dc.languageen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleEfficiency analysis of AlGaN deep UV-LEDs based on rate equation-
dc.typeArticle-
dc.relation.volume2-
dc.identifier.doi10.1109/CLEOPR.2015.7376088-
dc.relation.page1-2-
dc.relation.journal2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.contributor.googleauthorYun, Joosun-
dc.contributor.googleauthorHirayamai, H.-
dc.contributor.googleauthorShim, Jong In-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.pidjishim-
dc.identifier.article7376088-
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