Theoretical studies on in-plane polarization characteristics of (11(2)over-bar0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates
- Title
- Theoretical studies on in-plane polarization characteristics of (11(2)over-bar0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates
- Other Titles
- Theoretical studies on in-plane polarization characteristics of (11$$\bar{2}$$0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates
- Author
- 심종인
- Keywords
- Optical polarization; GaN; InGaN; Strain relaxation; Quantum well; Light-emitting diodes
- Issue Date
- 2022-07
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 81, NO. 1, Page. 45-48
- Abstract
- The in-plane polarization characteristics of nonpolar (11 (2) over bar0) InxGa1-xN/GaN (x = 0.2) quantum-well (QW) structures are investigated as a function of In content in InyGa1-yN substrates by using the multiband effective-mass theory. States constituting the topmost valence subband change from vertical bar Y' >-like to vertical bar Z' >-like as the In content in the InGaN substrate increases. In the case of the QW structure grown on a conventional GaN substrate (y = 0.0), the y'-polarized matrix element is much larger than the x'-polarized matrix element. However, the y'-polarized matrix element rapidly decreases with increasing y content in the InGaN substrate and becomes similar to the x'-polarized matrix element. As a result, the magnitude of the in-plane optical anisotropy becomes smaller for QW structures with higher substrate In content because both x'- and y' -polarized emission peaks are similar to each other.
- URI
- https://link.springer.com/article/10.1007/s40042-022-00489-9https://repository.hanyang.ac.kr/handle/20.500.11754/185221
- ISSN
- 0374-4884;1976-8524
- DOI
- 10.1007/s40042-022-00489-9
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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