Fabrication and Shot Noise Characteristics of Ultra-Small Split-Gate GaAs Quantum Dots
- Title
- Fabrication and Shot Noise Characteristics of Ultra-Small Split-Gate GaAs Quantum Dots
- Author
- 정희준
- Keywords
- Quantum dot; Shot noise; GaAs
- Issue Date
- 2009-04
- Publisher
- 한국물리학회
- Citation
- Journal of the Korean Physical Society, v. 54, NO. 4, Page. 1594-1598
- Abstract
- We demonstrate the fabrication and the electrical characterization of lithographically-defined ultra-small lateral quantum dots based on a GaAs/AlGaAs heterostructure composed of tunable split metal gates. We evaluated two quantum dots have charging energies of 4.31 and 4.99 meV, respectively, from a measurement of the Coulomb diamond plot obtained from the 2-dimensional differential conductance via gate and source-drain biases. These values axe some of the largest energy scales ever reported for a lateral split-gate type single-electron device. We also measured the shot noise from a quantum dot by using a low-frequency noise measurement technique. Elastic cotunneling, inelastic cotunneling and sequential tunneling were analyzed using conductance and shot noise measurements.
- URI
- https://www.jkps.or.kr/journal/view.html?volume=54&number=4&spage=1594&year=2009https://repository.hanyang.ac.kr/handle/20.500.11754/184302
- ISSN
- 0374-4884;1976-8524
- DOI
- 10.3938/jkps.54.1594
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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