Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2023-07-21T02:36:00Z | - |
dc.date.available | 2023-07-21T02:36:00Z | - |
dc.date.issued | 2005-04 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, NO. 4, Page. L751-L755 | - |
dc.identifier.issn | 0374-4884;1976-8524 | - |
dc.identifier.uri | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART000951874 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/184079 | - |
dc.description.abstract | We have investigated the ohmic properties of Au/M(= Pd or Pt)/Zn/Pd/p-InP, focusing on the role of the third metal M in Au-free metallization. Both the lowest specific contact resistivity of 7 x 10(-6) Omega(.)cm(2) and a flat diffusion front were obtained for a sample with a Au/Pt/Zn/Pd/p-InP contact material after annealing at 400 degrees C for 4 min, indicating that the Pt layer was more effective than the Pd layer in preventing Zn out-diffusion during the annealing process. In addition to Au-free metallizations, we fabricated the Au-based metallization of Au/Cr/AuZn/Au/p-lnP in order to justify our ohmic contact process, and we compared its ohmic characteristics. | - |
dc.language | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | ohmic contact | - |
dc.subject | p-InP | - |
dc.subject | Au/Pt/Zn/Pd/p-InP | - |
dc.subject | Au/Cr/AuZn/Au/p-InP | - |
dc.title | Ohmic contacts of Pd/Zn/M(= Pd or Pt)/Au to p-type InP | - |
dc.type | Article | - |
dc.relation.no | 4 | - |
dc.relation.volume | 46 | - |
dc.relation.page | L751-L755 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Hwang, Sungmin | - |
dc.contributor.googleauthor | Shim, Jongin | - |
dc.contributor.googleauthor | Eo, Yungseon | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | jishim | - |
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