Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 심종인 | - |
dc.date.accessioned | 2023-07-21T00:58:38Z | - |
dc.date.available | 2023-07-21T00:58:38Z | - |
dc.date.issued | 2014-11 | - |
dc.identifier.citation | Applied Physics Letters, v. 105, NO. 19, article no. 191114, Page. 1-5 | - |
dc.identifier.issn | 0003-6951;1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4902023 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/184028 | - |
dc.description.abstract | We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN-based blue light-emitting-diode (LED) by comparing the temperature-dependent characteristics of the electroluminescence (EL) efficiency, the EL spectra, and the current-voltage relation over a wide range of temperature (50-300 K). Based on these experimental results, we demonstrate that the simple ohmic potential drop in the Shockley diode equation is not sufficient to explain the experimental data when the severe carrier overflow to the p-(Al)GaN layer induces the efficiency droop in the LED device. The anomalous relation between current and voltage at cryogenic temperatures is explained by the space-charge-limited current formed by the overflown electrons, rather than by the increase of a constant series resistance in the p-(Al) GaN layer. (C) 2014 AIP Publishing LLC. | - |
dc.description.sponsorship | the Industrial Strategic Technology Development Program under Grant No. 10041878, "Development of WPE 75% LED device process and standard evaluation technology," funded by the Ministry of Trade, Industry and Energy, Republic of Korea. | - |
dc.language | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes | - |
dc.type | Article | - |
dc.relation.no | 19 | - |
dc.relation.volume | 105 | - |
dc.identifier.doi | 10.1063/1.4902023 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | Applied Physics Letters | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Kim, Hyunsung | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Kim, Kyu-Sang | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | jishim | - |
dc.identifier.article | 191114 | - |
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