V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells
- Title
- V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells
- Author
- 심종인
- Keywords
- GaN; V-pit; dislocation; cathodoluminescence; transmission electron microscopy
- Issue Date
- 2015-11
- Publisher
- Institute of Electrical and Electronics Engineers
- Citation
- Journal of Electronic Materials, v. 44, NO. 11, Page. 4134-4138
- Abstract
- The luminescence characteristics of V-pits in InGaN/GaN quantum wells (QW) correlated directly with the microstructure of the V-pits, as studied by use of transmission electron microscopy with cathodoluminescence. {10-11}-Faceted V-pits, formed in the QW, produce more intense blue-shifted emission than {0001}-plane QW. A dead emission center seems to be present at the corner of the V-pit which connects the R-plane and C-plane QW. High-resolution transmission electron microscopy revealed formation of indium-deficient QW at the corners of the V-pits. High potential barriers occur because of the lack of indium around the hexagonal V-pit; this effectively blocks diffusion of carriers into the threading dislocations known to be non-radiative recombination centers. V-pits thus have promise for improving the internal quantum efficiency of light-emitting diodes.
- URI
- https://link.springer.com/article/10.1007/s11664-015-3994-zhttps://repository.hanyang.ac.kr/handle/20.500.11754/184023
- ISSN
- 0361-5235;1543-186X
- DOI
- 10.1007/s11664-015-3994-z
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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