Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)
- Title
- Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)
- Author
- 심종인
- Keywords
- Capacitance-voltage characteristics; Light emitting diodes; Photoconductivity; Power generation; Quantum well devices; Temperature measurement; Voltage measurement
- Issue Date
- 2016-02
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- MOC 2015 - Technical Digest of 20th Microoptics Conference, article no. 7416402, Page. 1-2
- Abstract
- To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements. © 2015 The Japan Society of Applied Physics.
- URI
- https://ieeexplore.ieee.org/document/7416402https://repository.hanyang.ac.kr/handle/20.500.11754/184015
- DOI
- 10.1109/MOC.2015.7416402
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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