Ultra-small Form-Factor Helix on Pad-Type Stage-Bypass WCDMA Tx Power Amplifier Using a Chip-Stacking Technique and a Multilayer Substrate
- Title
- Ultra-small Form-Factor Helix on Pad-Type Stage-Bypass WCDMA Tx Power Amplifier Using a Chip-Stacking Technique and a Multilayer Substrate
- Author
- 김정현
- Keywords
- Chip-stacking; efficiency; HoP-iPD; multilayer substrate; small form-factor; stage-bypass PA
- Issue Date
- 2010-04
- Publisher
- WILEY
- Citation
- ETRI JOURNAL, v. 32, NO. 2, Page. 327-329
- Abstract
- A fully integrated small form-factor HBT power amplifier (PA) was developed for UMTS Tx applications. For practical use, the PA was implemented with a well configured bottom dimension, and a CMOS control IC was added to enable/disable the HBT PA. By using helix-on-pad integrated passive device output matching, a chip-stacking technique in the assembly of the CMOS IC, and embedding of the bulky inductive lines in a multilayer substrate, the module size was greatly reduced to 2 mm x 2.2 mm. A stage-bypass technique was used to enhance the efficiency of the PA. The PA showed a low idle current of about 20 mA and a PAE of about 15% at an output power of 16 dBm, while showing good linearity over the entire operating power range.
- URI
- https://onlinelibrary.wiley.com/doi/abs/10.4218/etrij.10.0209.0486https://repository.hanyang.ac.kr/handle/20.500.11754/183798
- ISSN
- 1225-6463;2233-7326
- DOI
- 10.4218/etrij.10.0209.0486
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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