A novel load insensitive RF power amplifier using a load mismatch detection and curing technique
- Title
- A novel load insensitive RF power amplifier using a load mismatch detection and curing technique
- Author
- 김정현
- Keywords
- Antenna mismatch; linearity enhancement; load insensitive HBT PA; SO FET impedance mismatch detector; SOI FET TOMN
- Issue Date
- 2013-06
- Publisher
- IEEE
- Citation
- Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, v. 2013, article no. 6569599, Page. 341-344
- Abstract
- This paper proposes a new load insensitive RF power amplifier (PA) for mobile handsets using a load mismatch detection and curing technique. The PA controls a tunable output matching network (TOMN) adaptively based on the information of a mismatched load, thereby enhancing PA performances dramatically at a mismatched load without substantial performance degradation at a matched load. A load mismatch detector and TOMN can simply be implemented by using 0.18-μm silicon on insulator (SOI) FET that are integrated with 2-μm InGaP/GaAs HBT PA MMIC into a single module. To verify the idea, the PA module has been designed and implemented especially for a linearity enhancement under load mismatch condition. With WCDMA R'99 signal at 1.95 GHz, the measured results showed that ACLR at output power of 28.25 dBm was improved by as much as 13.7 dB on the worst ACLR-Ioad angle compared to a conventional PA. In this way, the proposed load insensitive PA can keep ACLR under -37 dBc all over the load angle at 2.5:1 voltage standing wave ratio (VSWR). © 2013 IEEE.
- URI
- https://ieeexplore.ieee.org/document/6569599https://repository.hanyang.ac.kr/handle/20.500.11754/183790
- ISSN
- 1529-2517;1097-2633
- DOI
- 10.1109/RFIC.2013.6569599
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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