Simulation Study of Sub-10 nm Pattern Formation Using Diblock Polymer Directed Self-assembly
- Title
- Simulation Study of Sub-10 nm Pattern Formation Using Diblock Polymer Directed Self-assembly
- Author
- 정영대
- Keywords
- Lithography; Lithography simulation; Self-assembly; Self-assembly process; Block copolymer
- Issue Date
- 2010-12
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 57, NO. 6, Page. 1942.0-1945.0
- Abstract
- Because top-down approaches, such as the extreme ultraviolet technique and high-index fluid-based immersion ArF lithography, may cover one or two generations, lithography technology for scaling down feature size to sub-10-nm is becoming more complex. The directed self-assembly technology of block copolymers is one candidate for next-generation lithography. In this paper, a directed self-assembly lithography process for block copolymers is modeled and simulated on a molecular scale to solve the challenges associated with directed self-assembly technology. Sub-10-mm patterns can be formed by using precise pattern placement of a conventional 'top-clown' optical lithography with the well-defined nanostructure and self-healing properties of 'bottom-up' block copolymer self-assembly. Simulation results matched the experiment results.
- URI
- https://www.jkps.or.kr/journal/view.html?volume=57&number=6(1)&spage=1942&year=2010https://repository.hanyang.ac.kr/handle/20.500.11754/182133
- ISSN
- 0374-4884;1976-8524
- DOI
- 10.3938/jkps.57.1942
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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