Sensitivities of the InGaAs/InGaAsP/InGaAsP Intrastep Quantum Well to Thickness and Composition Variations for Realizing Efficient Electroabsorption Modulators
- Title
- Sensitivities of the InGaAs/InGaAsP/InGaAsP Intrastep Quantum Well to Thickness and Composition Variations for Realizing Efficient Electroabsorption Modulators
- Author
- 신동수
- Keywords
- quantum well; step barrier; sensitivity; composition; thickness; variation
- Issue Date
- 2008-08
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v. 47, NO. 8, Page. 6361-6363
- Abstract
- We examine the sensitivities of the intrastep-quantum-well (IQW) structure with an InGaAs well to the thickness and composition variations. With the layer variations into account, we evaluate the changes in absorption coefficient as a function of electric field and the Subsequent transfer functions of the electroabsorption modulator. It is concluded that the examined IQW structure is rather sensitive to the thickness variation but is robust to the composition variation. This work suggests that the thickness control is very important in actually growing the IQW structure to obtain the desired performance with the IQW.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.47.6361https://repository.hanyang.ac.kr/handle/20.500.11754/181926
- ISSN
- 0021-4922;1347-4065
- DOI
- 10.1143/JJAP.47.6361
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML