Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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dc.contributor.author신동수-
dc.date.accessioned2023-06-01T01:35:18Z-
dc.date.available2023-06-01T01:35:18Z-
dc.date.issued2010-03-
dc.identifier.citationElectronics Letters, v. 46, NO. 6, Page. 437-439-
dc.identifier.issn0013-5194;1350-911X-
dc.identifier.urihttps://digital-library.theiet.org/content/journals/10.1049/el.2010.2416en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/181913-
dc.description.abstractThe relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.-
dc.languageen-
dc.publisherInstitute of Electrical Engineers-
dc.titleRelationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes-
dc.typeArticle-
dc.relation.no6-
dc.relation.volume46-
dc.identifier.doi10.1049/el.2010.2416-
dc.relation.page437-439-
dc.relation.journalElectronics Letters-
dc.contributor.googleauthorHan, Dongpyo-
dc.contributor.googleauthorShim, Jongin-
dc.contributor.googleauthorShin, Dongsoo-
dc.sector.campusE-
dc.sector.daehak과학기술융합대학-
dc.sector.department나노광전자학과-
dc.identifier.piddshin-
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