Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Low-frequency noise characteristics of InGaN-based light-emitting diodes
- Title
- Low-frequency noise characteristics of InGaN-based light-emitting diodes
- Author
- 신동수
- Issue Date
- 2016-01
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v. 2, article no. 7376075, Page. 1-2
- Abstract
- We investigate the low-frequency noise characteristics of InGaN-based light-emitting diodes with different forward leakage currents. It is found that the low-frequency noise characteristics are closely correlated with the forward leakage current. © 2015 IEEE.
- URI
- https://ieeexplore.ieee.org/document/7376075https://repository.hanyang.ac.kr/handle/20.500.11754/181870
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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