Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis
- Title
- Radiative and non-radiative carrier lifetimes in InGaN-based light-emitting diodes investigated by impedance analysis
- Author
- 신동수
- Issue Date
- 2016-01
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v. 1, article no. 7375898, Page. 1-2
- Abstract
- To investigate the efficiency droop in InGaN-based light-emitting diodes, we have measured the differential carrier lifetimes using the electrical method. After separating the radiative and non-radiative carrier lifetimes using the internal quantum efficiency, we discuss their implications. © 2015 IEEE.
- URI
- https://ieeexplore.ieee.org/document/7375898https://repository.hanyang.ac.kr/handle/20.500.11754/181869
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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