Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2023-06-01T01:20:55Z | - |
dc.date.available | 2023-06-01T01:20:55Z | - |
dc.date.issued | 2016-08 | - |
dc.identifier.citation | Applied Physics Express, v. 9, NO. 8, article no. 081002, Page. 1-5 | - |
dc.identifier.issn | 1882-0778;1882-0786 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.7567/APEX.9.081002 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181866 | - |
dc.description.abstract | Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance-voltage, current-voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices. (C) 2016 The Japan Society of Applied Physics | - |
dc.language | en | - |
dc.publisher | Japan Soc of Applied Physics | - |
dc.title | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | - |
dc.type | Article | - |
dc.relation.no | 8 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.7567/APEX.9.081002 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | Applied Physics Express | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Kim, Kyu-Sang | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 나노광전자학과 | - |
dc.identifier.pid | dshin | - |
dc.identifier.article | 081002 | - |
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