Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes
- Title
- Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes
- Author
- 신동수
- Keywords
- light-emitting diodes; indium composition; defects; piezoelectric field; potential fluctuation
- Issue Date
- 2019-03
- Publisher
- MDPI
- Citation
- Applied Sciences-basel, v. 9, NO. 5, article no. 871, Page. 1-12
- Abstract
- We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different indium compositions. Various macroscopic characterizations have been performed to show that the strain-induced piezoelectric field (F-pz), the crystal quality, and the internal quantum efficiency increase with the sample's indium composition. This improved performance is owing to the carrier recombination at relatively defect-free indium-rich localized sites, caused by the local in-plane potential-energy fluctuation in MQWs. The potential-energy fluctuation in MQWs are considered to be originating from the combined effects of the inhomogeneous distribution of point defects, F-pz, and indium compositions.
- URI
- https://www.mdpi.com/2076-3417/9/5/871https://repository.hanyang.ac.kr/handle/20.500.11754/181851
- ISSN
- 2076-3417
- DOI
- 10.3390/app9050871
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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- 3585_신동수.pdfDownload
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