Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
- Title
- Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
- Author
- 방진호
- Issue Date
- 2012-04
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v. 100, NO. 18, article no. 183307, Page. 1-5
- Abstract
- An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 10(4)s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711209]
- URI
- https://aip.scitation.org/doi/10.1063/1.4711209https://repository.hanyang.ac.kr/handle/20.500.11754/181778
- ISSN
- 0003-6951;1077-3118
- DOI
- 10.1063/1.4711209
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > CHEMICAL AND MOLECULAR ENGINEERING(화학분자공학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML