Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 방진호 | - |
dc.date.accessioned | 2023-06-01T00:39:34Z | - |
dc.date.available | 2023-06-01T00:39:34Z | - |
dc.date.issued | 2012-04 | - |
dc.identifier.citation | Applied Physics Letters, v. 100, NO. 18, article no. 183307, Page. 1-5 | - |
dc.identifier.issn | 0003-6951;1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4711209 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181778 | - |
dc.description.abstract | An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 10(4)s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4711209] | - |
dc.description.sponsorship | Institute of Energy Technology Evaluation and Planning (KETEP) 20104010100620 ; Ministry of Trade, Industry & Energy (MOTIE), Republic of Korea; National Research Foundation of Korea; Ministry of Education, Science & Technology (MEST), Republic of Korea 2011-0001055, 2011-0024786 | - |
dc.language | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction | - |
dc.type | Article | - |
dc.relation.no | 18 | - |
dc.relation.volume | 100 | - |
dc.identifier.doi | 10.1063/1.4711209 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | Applied Physics Letters | - |
dc.contributor.googleauthor | Shin, Ik-Soo | - |
dc.contributor.googleauthor | Kim, Jung-Min | - |
dc.contributor.googleauthor | Jeun, Jun-Ho | - |
dc.contributor.googleauthor | Yoo, Seok-Hyun | - |
dc.contributor.googleauthor | Ge, Ziyi | - |
dc.contributor.googleauthor | Hong, Jong-In | - |
dc.contributor.googleauthor | Bang, Jin Ho | - |
dc.contributor.googleauthor | Kim, Yong-Sang | - |
dc.sector.campus | E | - |
dc.sector.daehak | 과학기술융합대학 | - |
dc.sector.department | 화학분자공학과 | - |
dc.identifier.pid | jbang | - |
dc.identifier.article | 183307 | - |
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