Repository at Hanyang UniversityCOLLEGE OF ENGINEERING SCIENCES[E](공학대학)MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과)Articles
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dc.contributor.author박태주-
dc.date.accessioned2023-05-26T05:07:55Z-
dc.date.available2023-05-26T05:07:55Z-
dc.date.issued2012-08-
dc.identifier.citationHigh-k Gate Dielectrics for CMOS Technology, Page. 77-110-
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/10.1002/9783527646340.ch4en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/181548-
dc.languageen-
dc.publisherWILEY-VCH Verlag GmbH & Co.-
dc.subjectAtomic layer deposition-
dc.subjectDoping-
dc.subjectHigh-k gate dielectrics-
dc.subjectOxygen sources-
dc.subjectPrecursors-
dc.subjectThermal budget-
dc.titleAtomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate-
dc.typeArticle-
dc.identifier.doi10.1002/9783527646340.ch4-
dc.relation.page77-110-
dc.relation.journalHigh-k Gate Dielectrics for CMOS Technology-
dc.contributor.googleauthorPark, Tae joo-
dc.contributor.googleauthorCho, Moonju-
dc.contributor.googleauthorJung, Hyung suk-
dc.contributor.googleauthorHwang, Cheol seong-
dc.sector.campusE-
dc.sector.daehak공학대학-
dc.sector.department재료화학공학과-
dc.identifier.pidtjp-
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