Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes
- Title
- Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes
- Author
- 이정호
- Keywords
- Mechanical stress; Reliability; W gate
- Issue Date
- 2005-04
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v. 44, NO. 4 B, Page. 2221-2224
- Abstract
- We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WNx/polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2/Si interface, resulting in the degradation of the gate oxide. ©2005 The Japan Society of Applied Physics.
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.44.2221https://repository.hanyang.ac.kr/handle/20.500.11754/181423
- ISSN
- 0021-4922;1347-4065
- DOI
- 10.1143/JJAP.44.2221
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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