Silicon Nanowire Array Solar Cell Prepared by Metal-Induced Electroless Etching with a Novel Processing Technology
- Title
- Silicon Nanowire Array Solar Cell Prepared by Metal-Induced Electroless Etching with a Novel Processing Technology
- Author
- 이정호
- Issue Date
- 2010-04
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v. 49, NO. 4, article no. 04DN02, Page. 1-5
- Abstract
- We inexpensively fabricated vertically aligned Si nanowire solar cells using metal-induced electroless etching and a novel doping technique. Codoping of boron and phosphorus was achieved using a spin-on-doping method for the simultaneous formation of a front-side emitter and a back surface field in a one-step thermal cycle. Nickel electroless deposition was also performed in order to form a continuous metal grid electrode on top of an array of vertically aligned Si nanowires. A highly dense array of Si nanowires with low reflectivity was obtained using Ag nanoparticles of optimal size (60-90 nm). We also obtained an open circuit voltage of 544 mV, a short circuit current of 14.68 mA/cm(2), and a cell conversion efficiency of 5.25% at 1.5AM illumination. The improved photovoltaic performance was believed to be the result of the excellent optical absorption of the Si nanowires and the improved electrical properties of the electroless deposited electrode. (C) 2010 The Japan Society of Applied Physics
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.49.04DN02https://repository.hanyang.ac.kr/handle/20.500.11754/181402
- ISSN
- 0021-4922;1347-4065
- DOI
- 10.1143/JJAP.49.04DN02
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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