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Optimal design for antireflective Si nanowire solar cells

Title
Optimal design for antireflective Si nanowire solar cells
Author
이정호
Keywords
Silicon nanowire; Solar cell; Antireflection; Light trapping; Metal-assisted electroless etching
Issue Date
2013-05
Publisher
Elsevier BV
Citation
Solar Energy Materials and Solar Cells, v. 112, Page. 84-90
Abstract
We suggest a design guideline that optimally combines light absorptance and electrical performance in silicon nanowire (SiNW) solar cells. The design was experimentally developed using a tradeoff relation between wire length and space-filling ratio. Increasing (or decreasing) the wire length decreases (or increases) the wire filling ratio required to achieve the same amount of light absorption. The superior antireflection characteristics of SiNW arrays stem from optical impedance matching. A wire length of 1.2 mu m suppressed light reflection enough to obtain 99% absorptance at a filling ratio of 38%. A short length (similar to 500 nm) design using nanopillars rather than nanowires effectively diminished the surface and bulk recombinations to achieve a short circuit current of similar to 30 mA/cm(2) while maintaining good light absorptance. (C) 2013 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0927024813000287https://repository.hanyang.ac.kr/handle/20.500.11754/181367
ISSN
0927-0248;1879-3398
DOI
10.1016/j.solmat.2012.12.046
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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