Hydroxyl functionalization improves the surface passivation of nanostructured silicon solar cells degraded by epitaxial regrowth
- Title
- Hydroxyl functionalization improves the surface passivation of nanostructured silicon solar cells degraded by epitaxial regrowth
- Author
- 이정호
- Issue Date
- 2015-04
- Publisher
- Royal Society of Chemistry
- Citation
- RSC Advances, v. 5, NO. 49, Page. 39177-39181
- Abstract
- Metal-assisted chemical etching is useful and cost-efficient for nanostructuring the surface of crystalline silicon solar cells. We have found that the nanoscale epitaxy of silicon occurs, upon subsequent annealing, at the Al2O3/Si interface amorphized by metal-assisted etching. Since this epitaxial growth penetrates into the pre-formed Al2O3 film, the bonding nature at the newly formed interfaces (by the regrown epitaxy) is deteriorated, resulting in a poor performance of Al2O3 passivation. Compared to the conventional hydrogen (H-) passivation, hydroxyl functionalization by oxygen plasma treatment was more effective as the wafer became thinner. For ultrathin (similar to 50 mm) wafers, similar to 30% depression in surface recombination velocity led to the improvement of similar to 15.6% in the short circuit current. The effectiveness of hydroxyl passivation validated by ultrathin wafers would be beneficial for further reducing the wafer cost of nanostructured silicon solar cells.
- URI
- https://pubs.rsc.org/en/content/articlelanding/2015/RA/C5RA03775Ahttps://repository.hanyang.ac.kr/handle/20.500.11754/181346
- ISSN
- 2046-2069
- DOI
- 10.1039/c5ra03775a
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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