Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진구 | - |
dc.date.accessioned | 2023-05-24T02:37:12Z | - |
dc.date.available | 2023-05-24T02:37:12Z | - |
dc.date.issued | 2000-03 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, v. 39, NO. 3A, Page. 1085-1090 | - |
dc.identifier.issn | 0021-4922;1347-4065 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1143/JJAP.39.1085 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181317 | - |
dc.description.abstract | The purpose of this study was to investigate the effect of chemicals and particles on chemical mechanical polishing (CMP) of polyimide (PI). The effect of particle size and its surface area on both the removal rates and the surface roughness was investigated as a function of the slurry content upon the addition of various chemicals. The optimal particle content was measured for silica, ceria and alumina slurries in terms of the removal rate and surface roughness. The removal rate was highest when deionized (DI)-water-based alumina slurry was used. However, the greatest surface roughness was measured when ceria slurry was used rather than alumina. Alkaline chemicals were added to the slurry to enhance the removal rates of PI during CMP. The addition of Tetramethyl Ammonium Hydroxide (TMAH) and Potassium Hydroxide (KOH) to ceria slurry but not to alumina and silica slurries increased the removal rate significantly at higher pH values. The addition of ethylenediamine and the presoaking of PI in hot DI water did not increase the removal rate in alkaline-chemical-based slurries. The addition of surfactant resulted in a decrease of the removal rate to half of that determined without the addition of surfactant. | - |
dc.description.sponsorship | This study was supported by the academic research fund of the Ministry of Education, Republic of Korea, through the Inter-University Semiconductor Research Center (ISRC 97-E-1070) of Seoul National University. | - |
dc.language | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.subject | CMP | - |
dc.subject | polymide | - |
dc.subject | low k materials | - |
dc.subject | slurry | - |
dc.subject | removal rate | - |
dc.subject | surface roughness | - |
dc.subject | alumina particles | - |
dc.subject | silica particles | - |
dc.subject | ceria particles | - |
dc.title | Effect of chemicals and slurry particles on chemical mechanical polishing of polyimide | - |
dc.type | Article | - |
dc.relation.no | 3A | - |
dc.relation.volume | 39 | - |
dc.identifier.doi | 10.1143/JJAP.39.1085 | - |
dc.relation.page | 1085-1090 | - |
dc.relation.journal | Japanese Journal of Applied Physics | - |
dc.contributor.googleauthor | Kim, Hyoung-Gyun | - |
dc.contributor.googleauthor | Ahn, Yoomin | - |
dc.contributor.googleauthor | Moon, Doo-Kyung | - |
dc.contributor.googleauthor | Park, Jin Goo | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 재료화학공학과 | - |
dc.identifier.pid | jgpark | - |
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