Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진구 | - |
dc.date.accessioned | 2023-05-24T02:23:06Z | - |
dc.date.available | 2023-05-24T02:23:06Z | - |
dc.date.issued | 2006-12 | - |
dc.identifier.citation | 한국재료학회지, v. 16, NO. 12, Page. 731-738 | - |
dc.identifier.issn | 1225-0562;2287-7258 | - |
dc.identifier.uri | http://db.koreascholar.com/Article?code=296671 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/181294 | - |
dc.description.abstract | It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, H3PO4 contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types. | - |
dc.description.sponsorship | 본 연구는 과학기술부 21세기 프론티어 연구개발사업인 나노메카트로닉스 기술개발사업(과제번호: 05K1401- 00215)과 교육인적자원부, 산업자원부, 노동부의 출연금으로 수행한 최우수실험실지원사업의 연구비 지원을 받아 수행되었으며, 이에 관계자 여러분께 감사 드립니다. | - |
dc.language | ko | - |
dc.publisher | 한국재료학회 | - |
dc.subject | Al (aluminum) | - |
dc.subject | Chemical mechanical planarization (CMP) | - |
dc.subject | Metallization | - |
dc.subject | Acidic colloidal slurry | - |
dc.title | 연마제 특성에 따른 차세대 금속배선용 Al CMP (chemical mechanical planarization) 슬러리 평가 | - |
dc.title.alternative | Evaluation of Al CMP slurry based on abrasives for next generation metal line fabrication | - |
dc.type | Article | - |
dc.relation.no | 12 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.3740/MRSK.2006.16.12.731 | - |
dc.relation.page | 731-738 | - |
dc.relation.journal | 한국재료학회지 | - |
dc.contributor.googleauthor | 차남구 | - |
dc.contributor.googleauthor | 강영재 | - |
dc.contributor.googleauthor | 김인권 | - |
dc.contributor.googleauthor | 김규채 | - |
dc.contributor.googleauthor | 박진구 | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 재료화학공학과 | - |
dc.identifier.pid | jgpark | - |
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