Effect of Rinse Process on Removal of Crown Type Defects during Photoresist Development
- Title
- Effect of Rinse Process on Removal of Crown Type Defects during Photoresist Development
- Author
- 박진구
- Issue Date
- 2011-01
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v. 50, NO. 1, article no. 016505, Page. 1-4
- Abstract
- Defect reduction is one of the most important factors to improve the process stability and yield in the wafer fabrication process. Reduction of defects after development process is a critical issue in photolithography. A special category of post development defects is the "crown defect'' which is formed on large exposed or unexposed areas. In this work, the process was developed to remove crown defects from gate and hole patterns by optimizing the deionized water (DIW) rinse time and applying the sling effect. After testing at various conditions, it was found that 80 and 40 s DIW rinse combined with sling effect could completely remove the crown defects from gate and hole patterns, respectively, which would improve the product quality and yield. (C) 2011 The Japan Society of Applied Physics
- URI
- https://iopscience.iop.org/article/10.1143/JJAP.50.016505https://repository.hanyang.ac.kr/handle/20.500.11754/181233
- ISSN
- 0021-4922;1347-4065
- DOI
- 10.1143/JJAP.50.016505
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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