Effect of FOUP atmosphere control on process wafer integrity in sub20 nm device fabrication
- Title
- Effect of FOUP atmosphere control on process wafer integrity in sub20 nm device fabrication
- Author
- 박진구
- Keywords
- Corrosion; FOUP; N2 Purge; Process queue
- Issue Date
- 2015-00
- Publisher
- Scitec Publications Ltd.
- Citation
- Solid State Phenomena, v. 219, Page. 256-259
- Abstract
- Defects could be generated on the wafers by the particle contamination, formation of organic residue, corrosion, native oxide growth on the surface and airborne molecular contaminants (AMC) [1] etc. These problems hinder the device performance and also can decrease the yield and productivity in the semiconductor manufacturing process. It could be resolved by various cleaning methods [2]. However, the results such as corrosion, native oxide growth on wafer and AMC deposition should be handled properly by N2 gas purge prevention method during the process or standby [3,4]. It should be implemented before starting the process, which can maximize the productivity with a higher yield by minimizing the process queue and maintaining wafer surface integrity in sub 20 nm device fabrication.
- URI
- https://www.proquest.com/docview/1791380468?accountid=11283https://repository.hanyang.ac.kr/handle/20.500.11754/181183
- ISSN
- 1012-0394;1662-9779
- DOI
- 10.4028/www.scientific.net/SSP.219.256
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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