Role of Tellurium Ions for Electrochemically Synthesized Zinc Telluride 2D Structures on Nonconductive Substrate
- Title
- Role of Tellurium Ions for Electrochemically Synthesized Zinc Telluride 2D Structures on Nonconductive Substrate
- Author
- 유봉영
- Keywords
- back-gated field-effect-transistors; electrodeposition on insulators; NO2 sensors; tellurium chemical reaction; zinc telluride
- Issue Date
- 2023-03
- Publisher
- WILEY
- Citation
- ADVANCED MATERIALS INTERFACES,
- Abstract
- Although electrodeposition has emerged as a promising approach to make metal chalcogenide nanostructures, it has an underlying issue of exfoliating the deposits affixed to a conductive substrate, which is inevitable to transfer electrons for a reduction reaction, for precise characterization and advanced device fabrication. Herein, direct electrodeposition of metal chalcogenides on a silicon dioxide (SiO2) insulator and its device applications for a back-gated field-effect-transistor and a nitrogen dioxide gas sensor are investigated. Tellurium metal nanorods are deposited on SiO2 by the redox reaction of tellurium substances in the electrolyte. Using underpotential deposition, zinc telluride (ZnTe) is propagated onto tellurium sites, which has deposited on SiO2, bridging the microgap electrode on SiO2. The growth mechanisms of ZnTe on the SiO2 are also explored. This finding addresses the major challenge associated with the electrodeposition by the successful deposition of complex chalcogenides on an insulating substrate that expands its applications in fields for advanced electronics.
- URI
- https://onlinelibrary.wiley.com/doi/10.1002/admi.202202023https://repository.hanyang.ac.kr/handle/20.500.11754/180919
- ISSN
- 2196-7350;2196-7350
- DOI
- 10.1002/admi.202202023
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
- Files in This Item:
- 99327_유봉영.pdfDownload
- Export
- RIS (EndNote)
- XLS (Excel)
- XML