(Invited)Device Scalability of InGaZnO TFTs for Next-Generation Displays
- Title
- (Invited)Device Scalability of InGaZnO TFTs for Next-Generation Displays
- Author
- 오새룬터
- Issue Date
- 2020-10
- Publisher
- Electrochemical Society
- Citation
- ECS Transactions, v. 98, NO. 7, Page. 47-54
- Abstract
- Device scaling of thin-film transistors has only recently gained attention, as the need has grown for shorter channel lengths in hybrid integration applications as well as a performance enhancer in future displays. In this study, we study the device scalability of shortchannel top-gate oxide TFTs down to 1 mm, with particular focus on the carrier profile at the channel edges. We propose a carrier profile extraction method by utilizing comprehensive simulation fitting of the effective channel length, threshold voltage roll-off to the measured and extracted values. We find that the effective channel length plays an important role at short-channel lengths, and the scalability can be improved by adjusting the process-dependent carrier concentration profile.
- URI
- https://iopscience.iop.org/article/10.1149/09807.0047ecst/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/178762
- ISSN
- 1938-5862;1938-6737
- DOI
- 10.1149/09807.0047ecst
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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