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The effect of an annealing process on atomic layer deposited TiO2 thin films (vol 33, 045705, 2022)
- Title
- The effect of an annealing process on atomic layer deposited TiO2 thin films (vol 33, 045705, 2022)
- Author
- 전형탁
- Keywords
- TiO2 thin film; annealing process; high dielectric constant; low leakage current; atomic layer deposition
- Issue Date
- 2022-03
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v. 33, NO. 11, article no. 119501, Page. 1-2
- Abstract
- We have found that the binding energy of Ti 2p peak in figure 2 was incorrect. The correct version of figure 2 is presented here. Compared with previous data, the binding energy of Ti3+2p1/2 peak was changed. (Figure Presented). © 2022 Institute of Physics Publishing. All rights reserved.
- URI
- https://iopscience.iop.org/article/10.1088/1361-6528/ac412fhttps://repository.hanyang.ac.kr/handle/20.500.11754/178281
- ISSN
- 0957-4484;1361-6528
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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