Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2022-12-12T04:46:51Z | - |
dc.date.available | 2022-12-12T04:46:51Z | - |
dc.date.issued | 2021-08 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 13, NO. 33, Page. 39584-39594 | en_US |
dc.identifier.issn | 1944-8244;1944-8252 | en_US |
dc.identifier.uri | https://pubs.acs.org/doi/10.1021/acsami.1c09901 | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178213 | - |
dc.description.abstract | High-density SnOx and SiOx thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 degrees C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H2O2) and O-2 plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnOx and SiOx were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 degrees C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnOx. The film density, crystallinity, and pinholes formed in the SnOx film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiOx and SnOx deposited using plasma-enhanced ALD was measured using WVTR (H2O molecule diffusion) at 2.43 x 10(-5) g/m(2) day with a 10/10 nm NL structure and time-lag gas permeation measurement (H-2 gas diffusion) for applications as passivation layers in various electronic devices. | en_US |
dc.description.sponsorship | This research was supported by LG Display. | en_US |
dc.language | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | plasma-enhanced atomic layer deposition | en_US |
dc.subject | gas diffusion barrier | en_US |
dc.subject | gas diffusion mechanism | en_US |
dc.subject | silicon oxide | en_US |
dc.subject | tin oxide | en_US |
dc.subject | nanolaminate structure | en_US |
dc.title | Atomic-Layer-Deposited SiOx/SnOx Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers | en_US |
dc.type | Article | en_US |
dc.relation.no | 33 | - |
dc.relation.volume | 13 | - |
dc.identifier.doi | 10.1021/acsami.1c09901 | en_US |
dc.relation.page | 39584-39594 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Han, Ju-Hwan | - |
dc.contributor.googleauthor | Lee, Seong-Hyeon | - |
dc.contributor.googleauthor | Jeong, Seok-Goo | - |
dc.contributor.googleauthor | Kim, Dong-Yeon | - |
dc.contributor.googleauthor | Yang, Hae Lin | - |
dc.contributor.googleauthor | Lee, Seunghwan | - |
dc.contributor.googleauthor | Yoo, Seung Yeon | - |
dc.contributor.googleauthor | Park, Inho | - |
dc.contributor.googleauthor | Park, Ho Bum | - |
dc.contributor.googleauthor | Lim, Kwang-Su | - |
dc.contributor.googleauthor | Yang, Won-Jae | - |
dc.contributor.googleauthor | Choi, Hyun-Chul | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | jsparklime | - |
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