Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2022-12-12T02:01:08Z | - |
dc.date.available | 2022-12-12T02:01:08Z | - |
dc.date.issued | 2022-07 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 12, NO. 1, article no. 12167, Page. 1-10 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | https://www.nature.com/articles/s41598-022-16636-y | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/178193 | - |
dc.description.abstract | The optimized ALD infilling process for depositing Al2O3 in the vertical direction of PbS QDs enhances the photoresponsivity, relaxation rate and the air stability of PbS QDs hybrid IGZO NIR phototransistors. Infilled Al2O3, which is gradually deposited from the top of PbS QDs to the PbS/IGZO interface (1) passivates the trap sites up to the interface of PbS/IGZO without disturbing charge transfer and (2) prevents QDs deterioration caused by outside air. Therefore, an Al2O3 infilled PbS QD/IGZO hybrid phototransistor (AI-PTs) exhibited enhanced photoresponsivity from 96.4 A/W to 1.65 x 10(2) A/W and a relaxation time decrease from 0.52 to 0.03 s under NIR light (880 nm) compared to hybrid phototransistors without Al2O3 (RF-PTs). In addition, AI-PTs also showed improved shelf stability over 4 months compared to RF-PTs. Finally, all devices we manufactured have the potential to be manufactured in an array, and this ALD technique is a means of fabricating robust QDs/metal oxide hybrids for optoelectronic devices. | en_US |
dc.description.sponsorship | This work was supported by by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIT) (2018-0-00202, Development of Core Technologies for Transparent Flexible Display Integrated Biometric Recognition Device). This research was supported by the MOTIE (Ministry of Trade, Industry & Energy), project number #20010371. | en_US |
dc.language | en | en_US |
dc.publisher | NATURE PORTFOLIO | en_US |
dc.source | 85878_박진성.pdf | - |
dc.title | Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 12 | - |
dc.identifier.doi | 10.1038/s41598-022-16636-y | en_US |
dc.relation.page | 1-10 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Kim, Yoon-Seo | - |
dc.contributor.googleauthor | Oh, Hye-Jin | - |
dc.contributor.googleauthor | Shin, Seungki | - |
dc.contributor.googleauthor | Oh, Nuri | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.sector.campus | S | - |
dc.sector.daehak | 공과대학 | - |
dc.sector.department | 신소재공학부 | - |
dc.identifier.pid | jsparklime | - |
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