Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping
- Title
- Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping
- Author
- 이주헌
- Keywords
- DRAM capacitor; Zr 1-x Hf x O- 2 thin films; Dielectric constant; Leakage current; ALD
- Issue Date
- 2022-08
- Publisher
- Elsevier BV
- Citation
- Materials Letters, v. 321.0, article no. 132418, Page. 1-3
- Abstract
- With ultra-miniaturization of dynamic random-access memory (DRAM), it is very important to achieve equivalent-oxide-thickness (EOT) scaling of capacitors using materials applied to mass production. Compared to ZrO2, Zr1-xHfxO2 has a high possibility of improved electrical properties by doping in wide composition ranges. Therefore, we investigated the effect of Al-doping on electrical properties of Zr-rich Zr1-xHfxO2 thin films. Up to Al-doping of 2.1%, the leakage current was significantly improved without degradation of the dielectric constant, and it was possible to reduce the EOT by 0.12 nm in the leakage current specification applicable to DRAM capacitors.
- URI
- https://www.sciencedirect.com/science/article/pii/S0167577X22007716?pes=vorhttps://repository.hanyang.ac.kr/handle/20.500.11754/177628
- ISSN
- 0167-577X;1873-4979
- DOI
- 10.1016/j.matlet.2022.132418
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > BIONANO ENGINEERING(생명나노공학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML