Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이주헌 | - |
dc.date.accessioned | 2022-11-28T02:16:01Z | - |
dc.date.available | 2022-11-28T02:16:01Z | - |
dc.date.issued | 2022-08 | - |
dc.identifier.citation | Materials Letters, v. 321.0, article no. 132418, Page. 1-3 | - |
dc.identifier.issn | 0167-577X;1873-4979 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0167577X22007716?pes=vor | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/177628 | - |
dc.description.abstract | With ultra-miniaturization of dynamic random-access memory (DRAM), it is very important to achieve equivalent-oxide-thickness (EOT) scaling of capacitors using materials applied to mass production. Compared to ZrO2, Zr1-xHfxO2 has a high possibility of improved electrical properties by doping in wide composition ranges. Therefore, we investigated the effect of Al-doping on electrical properties of Zr-rich Zr1-xHfxO2 thin films. Up to Al-doping of 2.1%, the leakage current was significantly improved without degradation of the dielectric constant, and it was possible to reduce the EOT by 0.12 nm in the leakage current specification applicable to DRAM capacitors. | - |
dc.description.sponsorship | Acknowledgments This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No.2019R1C1C1002982) and Samsung Electronics Co., Ltd (IO201211-08043-01) | - |
dc.language | en | - |
dc.publisher | Elsevier BV | - |
dc.subject | DRAM capacitor | - |
dc.subject | Zr 1-x Hf x O- 2 thin films | - |
dc.subject | Dielectric constant | - |
dc.subject | Leakage current | - |
dc.subject | ALD | - |
dc.title | Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping | - |
dc.type | Article | - |
dc.relation.volume | 321.0 | - |
dc.identifier.doi | 10.1016/j.matlet.2022.132418 | - |
dc.relation.page | 1-3 | - |
dc.relation.journal | Materials Letters | - |
dc.contributor.googleauthor | Jeong, Min Ji | - |
dc.contributor.googleauthor | Lee, Seung Won | - |
dc.contributor.googleauthor | Kim, Hyo-Bae | - |
dc.contributor.googleauthor | Oh, Youkyoung | - |
dc.contributor.googleauthor | Lee, Ju Hun | - |
dc.contributor.googleauthor | Ahn, Ji-Hoon | - |
dc.sector.campus | E | - |
dc.sector.daehak | 공학대학 | - |
dc.sector.department | 생명나노공학과 | - |
dc.identifier.pid | juhunlee | - |
dc.identifier.article | 132418 | - |
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