Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 고민재 | - |
dc.date.accessioned | 2022-10-25T01:32:30Z | - |
dc.date.available | 2022-10-25T01:32:30Z | - |
dc.date.issued | 2021-02 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 855, Part 2, article no. 157514, page. 1-14 | en_US |
dc.identifier.issn | 0925-8388; 1873-4669 | en_US |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925838820338780?via%3Dihub | en_US |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/175765 | - |
dc.description.abstract | Carbon-based organic material such as nitrogen-doped graphene oxide quantum dots (N-GOQDs) is a new-class material with unique biocompatible, high chemical inertness, and elevated photoluminescence properties. Two-terminal diffusive memristors can faithfully replicate biological synapse function via mutual similarities of in-/out-diffusion of Ag+ ions with biological Ca2+ migration dynamics for neural network applications. Inspired by hetero-plasticity phenomenon, in which Ca2+ dynamics can also be tuned by the 3rd counterpart - neuromodulatory axon, in this study, using an ultra-violet light source, we develop N-GOQDs based diffusive memristor that performs light-modulated synaptic behaviors. Specifically, photo-sensitive N-GOQDs ionic conductor shows n-pi* electron transitions under UV excitation; yet, nitrogen-doping further facilitates the electron transitions, giving out additional conductance induced by light. Further, we demonstrate endurable threshold resistive switching (TS) behavior based on Ag+ ions migration and its variety of facilitations via assisted UV illumination. The enhancement of post-synaptic current under assisted UV light, as well as the light stimulated transition from short-to long-term memory potentiation have been achieved. These findings are believed to be a step forward for the realization of higher bandwidth synapse modulation as future hardware-based neural network applications. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Programs and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (NRF-2016M3A7B4910426, NRF-2019R1F1A1057243), respectively, as well as the Future Semiconductor Device Technology Development Program (20003808, 20004399) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korean Semiconductor Research Consortium). This work is also supported by the Research Program (2018R1A2B2006708) funded by the National Research Foundation under the Ministry of Science and ICT, Republic of Korea. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Graphene oxide; Light stimulation; Diffusive memristor; Threshold switching; Synapse device | en_US |
dc.title | Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots (N-GOQDs) | en_US |
dc.type | Article | en_US |
dc.relation.volume | 855 | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.157514 | en_US |
dc.relation.page | 1-14 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Ali, Mumtaz | - |
dc.contributor.googleauthor | Sokolov, Andrey | - |
dc.contributor.googleauthor | Ko, Min Jae | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2021004394 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF CHEMICAL ENGINEERING | - |
dc.identifier.pid | mjko | - |
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