Effects of Tensile Strain on Dynamic and Static Inverters Using Amorphous Indium-Gallium-Zinc-Oxide TFTs
- Title
- Effects of Tensile Strain on Dynamic and Static Inverters Using Amorphous Indium-Gallium-Zinc-Oxide TFTs
- Author
- 박진성
- Keywords
- Amorphous indium-gallium-zinc oxide thin-film transistors; tensile strain; dynamic logic; logic circuit; TFTs
- Issue Date
- 2021-01
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE ELECTRON DEVICE LETTERS, v. 42, no. 3, page. 359-362
- Abstract
- The dynamic inverter using amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) is revealed to be more robust to tensile strain than the static inverter that is most widely used in TFT circuits. The results with the inverters can be reasonably extended to NAND or NOR gates, because all of them are commonly composed of pull-up and pull-down networks. The experimental results after tensile bending up to 20 000 times with a bending radius of 1.5 mm show that VOH and VOL in the dynamic inverter decrease to 85% and 0% of those in the static inverter, respectively. Also, while the power consumption of the static inverter increases by 36%, which is tens of μA, the dynamic inverter maintains low-power consumption, which is tens of nA. It is also worth noting that ratioed design and TFT operation in the saturation region make the circuit more sensitive to tensile strain than ratio-less design and TFT operation in the triode region.
- URI
- https://ieeexplore.ieee.org/document/9333637/https://repository.hanyang.ac.kr/handle/20.500.11754/175452
- ISSN
- 0741-3106; 1558-0563
- DOI
- 10.1109/LED.2021.3053777
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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