Graded Heterojunction of Perovskite/Dopant-free Polymeric Hole-Transport Layer for Efficient and Stable Metal Halide Perovskite Devices
- Title
- Graded Heterojunction of Perovskite/Dopant-free Polymeric Hole-Transport Layer for Efficient and Stable Metal Halide Perovskite Devices
- Author
- 박희준
- Keywords
- Perovskite solar cells; Graded heterojunction; Dopant-free polymeric hole-transport layer; Defect passivation; Device stability; High efficiency
- Issue Date
- 2020-12
- Publisher
- ELSEVIER
- Citation
- NANO ENERGY, v. 78, article no. 105159
- Abstract
- Solution-processed polycrystalline perovskite films possess numerous imperfections in their surface and grain-boundary, limiting their solar cell performance and stability. To attain a full thermodynamic potential from the device along with high stability, an efficient passivation strategy that can suppress those imperfections, inducing a trap-assisted charge recombination and a defect-initiated crystal decomposition, is needed. Herein, we demonstrate a perovskite/dopant-free polymer hole-transport material (HTM) graded heterojunction (GHJ), maximizing their intermolecular interactions that can passivate under-coordinated lead cations in perovskite and immobilize its volatile organic cations by forming Lewis-adducts and hydrogen bonds. For this purpose, a series of polymer HTMs, containing defect-healable and cross-linkable functional units, are newly designed. By composing a GHJ structure, it is confirmed the perovskite crystallinity increases with reduced trap-density, enhancing built-in potential of the solar cell device and thus decreasing carrier recombination, and its heat-, water-, and light-resistibility are enhanced. Consequently, superior optoelectronic properties, providing efficiencies of 22.1% (0.096 cm2) and 20.0% (1 cm2) with a Voc of 1.22 V having only 0.37 V Voc loss, and stability, preserving 92% of the initial efficiency after 500 h of light-illumination (AM 1.5G 100 mWcm−2 without UV-cut) in ambient air without encapsulation, are attained with the GHJ n-i-p devices.
- URI
- https://www.sciencedirect.com/science/article/pii/S2211285520307370?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/175009
- ISSN
- 2211-2855; 2211-3282
- DOI
- 10.1016/j.nanoen.2020.105159
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ORGANIC AND NANO ENGINEERING(유기나노공학과) > Articles
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