Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 안드레 | - |
dc.date.accessioned | 2022-08-04T05:01:20Z | - |
dc.date.available | 2022-08-04T05:01:20Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.citation | Journal of Semiconductors, v. 42, no. 1, article no. 013101, page. 1-30 | en_US |
dc.identifier.issn | 1674-4926 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1674-4926/42/1/013101 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/172088 | - |
dc.description.abstract | Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements of volatile memory, nonvolatile memory, and neuromorphic characteristics. Its memory and neuromorphic behaviors are currently being explored in relation to a range of materials, such as biological materials, perovskites, 2D materials, and transition metal oxides. In this review, we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching mechanisms. We then discuss emergent memory technologies using memristors, together with its potential neuromorphic applications, by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices, in areas such as ION/IOFF ratio, endurance, spike time-dependent plasticity (STDP), and paired-pulse facilitation (PPF), among others. The emulation of essential biological synaptic functions realized in various switching materials, including inorganic metal oxides and new organic materials, as well as diverse device structures such as single-layer and multilayer hetero-structured devices, and crossbar arrays, is analyzed in detail. Finally, we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education (NRF-2019R1F1A1057243), together with the Future Semiconductor Device Technology Development Program (20003808, 10080689, 20004399), funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.subject | RRAM | en_US |
dc.subject | memristor | en_US |
dc.subject | emerging memories | en_US |
dc.subject | neuromorphic computing | en_US |
dc.subject | electronic synapse | en_US |
dc.subject | resistive switching | en_US |
dc.subject | memristor engineering | en_US |
dc.title | Towards engineering in memristors for emerging memory and neuromorphic computing: A review | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/1674-4926/42/1/013101 | - |
dc.relation.page | 1-30 | - |
dc.relation.journal | Journal of Semiconductors | - |
dc.contributor.googleauthor | Sokolov, Andrey S. | - |
dc.contributor.googleauthor | Abbas, Haider | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2020015206 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | andrey | - |
dc.identifier.researcherID | ABI-7300-2020 | - |
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