Analysis of new interconnection covering top metallization layer for 650V GaN e-HEMT power modules

Abstract

This paper presents a new interconnection design for power modules. The interconnection has a shaped contact to be fit with the top metal of power semiconductors and is especially designed for GaN e-HEMT devices having a unique top-side metallization layer design and lateral conduction channel. This interconnection can reduce parasitic inductance/resistance and mitigate current density and thermal concentration in power modules. These advantages are validated by finite element method (FEM) simulations. In addition, to accommodate manufacturing inconvenience, an adjusted interconnection shape is also analyzed.