Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2021-11-01T05:20:15Z | - |
dc.date.available | 2021-11-01T05:20:15Z | - |
dc.date.issued | 2020-04 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 10, no. 1, article no. 5793 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/s41598-020-62721-5 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/166092 | - |
dc.description.abstract | Tungsten disulfide (WS2) quantum dots (QDs) embedded in polyvinylpyrrolidone (PVP) based flexible memristive devices were prepared, and those devices exhibited typical bistable electrical switching and remarkable nonvolatile memristive behaviors. Maximum electricity ON/OFF ratio obtained from the current-voltage (I-V) curves of the device is close to 10(4). The set voltage of the device is +0.7 V, which effectively reduced the energy consumption. The retention times extracted from data for the devices were as large as 1 x 10(4) s, which points to these devices having nonvolatile characteristics. Moreover, the highly flexible characteristics of the devices were demonstrated by bending the devices. The carrier transport mechanisms were explained by fitting the I-V curves, and possible operating mechanisms of the devices can be described based on the electron trapping and detrapping processes. WS2 QDs uniformly dispersed in pure transparent N, N-Dimethylformamide (DMF) were obtained by using ultrasonication and a hydrothermal process in this work. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2019R1A2B5B03069968). | en_US |
dc.language.iso | en | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | LARGE-AREA SYNTHESIS | en_US |
dc.subject | HYDROTHERMAL SYNTHESIS | en_US |
dc.subject | MEMORY | en_US |
dc.subject | MOS2 | en_US |
dc.subject | NANOCOMPOSITES | en_US |
dc.subject | FILMS | en_US |
dc.subject | EXFOLIATION | en_US |
dc.subject | TRANSITION | en_US |
dc.title | Highly Stable and Flexible Memristive Devices Based on Polyvinylpyrrolidone: WS2 Quantum Dots | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 10 | - |
dc.identifier.doi | 10.1038/s41598-020-62721-5 | - |
dc.relation.page | 5793-5793 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | An, Haoqun | - |
dc.contributor.googleauthor | Lee, Yong Hun | - |
dc.contributor.googleauthor | Lee, Jeong Heon | - |
dc.contributor.googleauthor | Wu, Chaoxing | - |
dc.contributor.googleauthor | Koo, Bon Min | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.relation.code | 2020051242 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | SCHOOL OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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