Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2021-09-27T02:10:37Z | - |
dc.date.available | 2021-09-27T02:10:37Z | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, no. 3, page. 1014-1020 | en_US |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.issn | 1557-9646 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8985304 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/165144 | - |
dc.description.abstract | This article reports the fabrication of highperformance amorphous indium gallium zinc tin oxide (a-IGZTO) thin-film transistors (TFTs) with superior bias stability. For comparison, amorphous indium gallium zinc oxide (a-IGZO) TFTswere also investigated to clarify the origin of the superior performance of IGZTO TFTs. It was found that the simultaneous heavy loading of In and Sn into the IGZTO system facilitated an effective mass densification, leading to a reduction in tail states and deep states. The fabricated a-IGZTO TFTs exhibited a high electron mobility (mu FE) of 46.7 cm(2)/Vs, a subthreshold swing (SS) gate of 0.15 V/decade, and an ION/ OFF ratio >1 x 10(8). Furthermore, greater gate-bias stress stabilitywas observed for the IGZTO TFTs compared with the IGZO TFTs. | en_US |
dc.description.sponsorship | This work was supported in part by the National Research Foundation (NRF) through the Korean Government under Grant NRF-2019R1A2C1089027 and in part by the Ministry of Trade, Industry and Energy (MOTIE) for the Development of Future Semiconductor Devices under Grant 10080689. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | en_US |
dc.subject | Amorphous indium gallium zinc oxide (a-IGZO) | en_US |
dc.subject | amorphous indium gallium zinc tin oxide (a-IGZTO) | en_US |
dc.subject | high performance | en_US |
dc.subject | mass density | en_US |
dc.subject | thin-film transistors (TFTs) | en_US |
dc.title | Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 67 | - |
dc.identifier.doi | 10.1109/TED.2020.2968592 | - |
dc.relation.page | 1014-1020 | - |
dc.relation.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.contributor.googleauthor | Choi, Il Man | - |
dc.contributor.googleauthor | Kim, Min Jae | - |
dc.contributor.googleauthor | On, Nuri | - |
dc.contributor.googleauthor | Song, Aeran | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.contributor.googleauthor | Jeong, Hoon | - |
dc.contributor.googleauthor | Park, Jeong Ki | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2020053787 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3857-1039 | - |
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