Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김정현 | - |
dc.date.accessioned | 2021-08-31T06:41:37Z | - |
dc.date.available | 2021-08-31T06:41:37Z | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | ELECTRONICS, v. 9, no. 9, Article no. 1378, 8pp | en_US |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://www.proquest.com/docview/2438793951?accountid=11283 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/164693 | - |
dc.description.abstract | This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (CVD), etching and so on. Additionally, each channel can be maintained at a constant output power because they have a gain factor tunable by a variable gain amplifier (VGA). For that reason, it is possible to have uniform plasma density on the wafer. The operating sequence is controllable by an external DC control port. Moreover, copper-tungsten (CuW) heat spreaders were applied to prevent RF performance degradation from heat generated by the high power amplifier (HPA), and a water jacket was implemented at the bottom of the power amplification part for liquid cooling. Drawing upon the measurement results, the output power at each channel was over 43 dBm (20 W) and the drain efficiency was more than 50% at 2.4 GHz. | en_US |
dc.description.sponsorship | This work was supported in part by the BK21PLUS Program through the National Research Foundation of Korea within the Ministry of Education, and in part by the National Research Foundation of Korea (NRF) grant funded by the Korea government (Ministry of Science) (No. NRF—2020R1A2B5B01002400). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | MDPI AG | en_US |
dc.subject | GaAs HBT | en_US |
dc.subject | GaN HEMT | en_US |
dc.subject | multi-channels | en_US |
dc.subject | plasma generator | en_US |
dc.subject | power amplifier module | en_US |
dc.subject | RF | en_US |
dc.subject | solid-state power amplifier | en_US |
dc.title | A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.3390/electronics9091378 | - |
dc.relation.page | 1-8 | - |
dc.relation.journal | ELECTRONICS | - |
dc.contributor.googleauthor | Nam, H. | - |
dc.contributor.googleauthor | Sim, T. | - |
dc.contributor.googleauthor | Kim, J. | - |
dc.relation.code | 2020049669 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | junhkim | - |
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